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Gallium Indium Nitride-Based Green Lasers

Identifieur interne : 001B55 ( Main/Repository ); précédent : 001B54; suivant : 001B56

Gallium Indium Nitride-Based Green Lasers

Auteurs : RBID : Pascal:12-0196239

Descripteurs français

Pascal (Inist)
- Laser injection, Analyse structurale, Propriété matériau, Croissance cristalline, Confinement optique, Gain, Perte optique, Injection porteur charge, Déformation mécanique, Région active, Technologie autoalignée, Guide onde évidement, Fiabilité, Composé III-V, 4255P.

English descriptors

KwdEn :
- Active region, Charge carrier injection, Crystal growth, Gain, III-V compound, Injection laser, Materials properties, Optical confinement, Optical losses, Reliability, Ridge waveguides, Self aligned technology, Strains, Structural analysis.

Abstract

In this review article, we describe group-III nitride laser diodes that emit light in the green spectral range, using epitaxial structures grown on gallium nitride (GaN) substrates with c- and semipolar-plane orientations. We address the motivation for these lasers, the challenges faced in creating them, and the progress made in this field to date. Different structural design choices are described, taking into account specific material properties and crystal growth requirements for these orientations. We review various properties of the materials involved, including optical gain, optical confinement, internal optical losses and carrier injection. We also discuss mechanical strain during the growth of active and passive regions, and the way in which it limits the structural design. Various aspects of laser chip fabrication are discussed, including self-aligned ridge waveguides and facet formation. Finally, we outline the status of green laser reliability and challenges in this area.

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Pascal:12-0196239

Le document en format XML

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<author><name sortKey="Sizov, Dmitry" uniqKey="Sizov D">Dmitry Sizov</name>
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<country>États-Unis</country>
<placeName><region type="state">État de New York</region>
</placeName>
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<author><name sortKey="Bhat, Rajaram" uniqKey="Bhat R">Rajaram Bhat</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Corning Incorporated, One Science Center Dr., Corning</s1>
<s2>NY, 14830</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
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<country>États-Unis</country>
<placeName><region type="state">État de New York</region>
</placeName>
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<author><name sortKey="Zah, Chung En" uniqKey="Zah C">Chung-En Zah</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Corning Incorporated, One Science Center Dr., Corning</s1>
<s2>NY, 14830</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
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<country>États-Unis</country>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active region</term>
<term>Charge carrier injection</term>
<term>Crystal growth</term>
<term>Gain</term>
<term>III-V compound</term>
<term>Injection laser</term>
<term>Materials properties</term>
<term>Optical confinement</term>
<term>Optical losses</term>
<term>Reliability</term>
<term>Ridge waveguides</term>
<term>Self aligned technology</term>
<term>Strains</term>
<term>Structural analysis</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Laser injection</term>
<term>Analyse structurale</term>
<term>Propriété matériau</term>
<term>Croissance cristalline</term>
<term>Confinement optique</term>
<term>Gain</term>
<term>Perte optique</term>
<term>Injection porteur charge</term>
<term>Déformation mécanique</term>
<term>Région active</term>
<term>Technologie autoalignée</term>
<term>Guide onde évidement</term>
<term>Fiabilité</term>
<term>Composé III-V</term>
<term>4255P</term>
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<front><div type="abstract" xml:lang="en">In this review article, we describe group-III nitride laser diodes that emit light in the green spectral range, using epitaxial structures grown on gallium nitride (GaN) substrates with c- and semipolar-plane orientations. We address the motivation for these lasers, the challenges faced in creating them, and the progress made in this field to date. Different structural design choices are described, taking into account specific material properties and crystal growth requirements for these orientations. We review various properties of the materials involved, including optical gain, optical confinement, internal optical losses and carrier injection. We also discuss mechanical strain during the growth of active and passive regions, and the way in which it limits the structural design. Various aspects of laser chip fabrication are discussed, including self-aligned ridge waveguides and facet formation. Finally, we outline the status of green laser reliability and challenges in this area.</div>
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<fA14 i1="01"><s1>Corning Incorporated, One Science Center Dr., Corning</s1>
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<fC01 i1="01" l="ENG"><s0>In this review article, we describe group-III nitride laser diodes that emit light in the green spectral range, using epitaxial structures grown on gallium nitride (GaN) substrates with c- and semipolar-plane orientations. We address the motivation for these lasers, the challenges faced in creating them, and the progress made in this field to date. Different structural design choices are described, taking into account specific material properties and crystal growth requirements for these orientations. We review various properties of the materials involved, including optical gain, optical confinement, internal optical losses and carrier injection. We also discuss mechanical strain during the growth of active and passive regions, and the way in which it limits the structural design. Various aspects of laser chip fabrication are discussed, including self-aligned ridge waveguides and facet formation. Finally, we outline the status of green laser reliability and challenges in this area.</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Laser injection</s0>
<s5>01</s5>
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<fC03 i1="01" i2="X" l="ENG"><s0>Injection laser</s0>
<s5>01</s5>
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<fC03 i1="01" i2="X" l="SPA"><s0>Laser inyección</s0>
<s5>01</s5>
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<fC03 i1="02" i2="X" l="FRE"><s0>Analyse structurale</s0>
<s5>02</s5>
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<fC03 i1="02" i2="X" l="ENG"><s0>Structural analysis</s0>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
</fC03>
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<s5>07</s5>
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<fC03 i1="07" i2="3" l="ENG"><s0>Optical losses</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Injection porteur charge</s0>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>Charge carrier injection</s0>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="SPA"><s0>Inyección portador carga</s0>
<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Région active</s0>
<s5>10</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Active region</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Región activa</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Technologie autoalignée</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Self aligned technology</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Tecnología rejilla autoalineada</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Guide onde évidement</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Ridge waveguides</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Fiabilité</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Reliability</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>22</s5>
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<fC03 i1="14" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>22</s5>
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<fC03 i1="14" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>22</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>56</s5>
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<fN44 i1="01"><s1>OTO</s1>
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<fN82><s1>OTO</s1>
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Gallium Indium Nitride-Based Green Lasers

Gallium Indium Nitride-Based Green Lasers

Descripteurs français

English descriptors

Abstract

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